SI8231AD-D-ISR

The SI8231AD-D-ISR isolation gate driver is a groundbreaking solution that offers two completely isolated drivers in one package, making it a versatile and compact choice for a wide range of applications. It boasts exceptional isolation performance with up to 5 kVRMS input-to-output isolation and can handle up to 15{{10}}0 VDC peak driver-to-driver differential voltage. Available in HS/LS and dual driver versions, it provides flexibility for various application needs. With a high switching frequency of up to 8 MHz and a peak output of 0.5 A or 4.0 A, it ensures precise and rapid control in high-performance systems. Additionally, its superior electromagnetic immunity guarantees reliability even in noisy environments. The SI8231AD-D-ISR comes in RoHS-compliant packages and is AEC-Q100 qualified for automotive applications, with support for AIAG compliant documentation and IMDS/CAMDS listings. This gate driver is a testament to innovation, precision, and safety, ensuring efficient and reliable operation in electronic systems.

• Potència lliurament sistemes

• motor control sistemes

• aïllat dc-dc power supplies

• Il·luminació control sistemes

• Plasma pantalles

• solar i industrial inversors

• Embarcament carregadors

• Bateria gestió sistemes

• Recàrrega estacions

• Tracció inversors

• Híbrid Elèctric Vehicles

• Bateria Elèctric Vehicles

The Si823x aïllat conductor família combines dos independent, aïllat drivers into a single package. The Si8230/1/3/4 are high-side/low-side drivers, while the Si8232/5/7/8 are dual drivers. Versions with peak output currents of 0.5 A (Si8230/1/2/7) and 4.0 A (Si8233/4/5/8) are available. All drivers operate with a maximum supply voltage of 24 V.

The Si823x drivers utilize Skyworks' proprietary silicon isolation technology, which provides up to 5 kVRMS withstand voltage per UL1577 and fast 45 ns propagation times. Driver outputs can be grounded to the same or separate grounds or connected to a positive or negative voltage. The TTL level compatible inputs with >400 mV histèresi are available in individual control input (Si8230/2/3/5/7/8) o PWM input (Si8231/4) configurations. High integration, low propagation delay, small installed size, flexibility, and cost-efectness make the Si823x family ideal for a wide range of aïllat MOSFET/IGBT gate drive applications.

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